SUD50N04-09H-E3

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SUD50N04-09H-E3 datasheet

• Маркировка
  SUD50N04-09H-E3
• Производитель
  Siliconix
• Описание
  Vishay Intertechnology SUD50N04-09H-E3 Configuration: Single Continuous Drain Current: 50 A Current - Continuous Drain (id) @ 25?° C: 50A Drain To Source Voltage (vdss): 40V Drain-source Breakdown Voltage: 40 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 85nC @ 10V Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 3700pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: * Package / Case: * Power - Max: 83.3W Power Dissipation: 8.33 W Rds On (max) @ Id, Vgs: 9 mOhm @ 20A, 10V Resistance Drain-source Rds (on): 0.009 Ohms Series: TrenchFET?® Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 5V @ 250?µA
• Количество страниц
  6 шт.
• Форматы файла
  HTML, PDF

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